氢脆机理模型（AIDE、HEDE、HESIV、HELP）和氢探测技术（TDS、HMT、SIMS、SKP、SKPFM、APT）
2024-10-14 14:20:57
作者：考拉腐蚀 来源：考拉腐蚀
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the ingress of H atoms from the H-containing atmosphere, followed by its diffusion(even at room temperature) to stress-concentated fields and micro structural traps; the interacttion between H atoms and a vatiety of multi-demensional microstrcutural defects including vacancies, solute atoms, dislocations, interfaces and micro-voids/cracks； the promoted damage nucleation and evolution due to the H-defect interactions.
HEDE, H-enhanced decohesion; HELP, H-enhanced localized plasticity; HESIV, H-enhanced strain-induced vacancies; AIDE, Adsorption-induced dislocation emmission;
TDS, Thermal desorption spectrometry 热脱附光谱; HMT, H microprint technique 氢微印技术; SIMS, Secondary ion mass spectroscopy 二次离子质谱; SKP, Scanning Kelvin probe 扫描开尔文探针; SKPFM, Scanning Kelvin probe force microscopy 扫描开尔文探针力显微镜; APT, Atom probe tomography 原子探针断层成像; Netron radiography/tomography 中子射线断层成像;
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